Title :
S-parameter characterization of mm-wave IMPATT oscillators
Author :
Hasch, Jürgen ; Kasper, Erich
Author_Institution :
Central R&D, Robert Bosch GmbH, Stuttgart
Abstract :
Designing oscillators in a fully monolithically integrated technology requires accurate characterization of the active element, as well as the surrounding passive circuitry. Based upon S parameter measurements of Impatt diodes, millimeter wave oscillators up to 124 GHz have been designed,manufactured and measured. Two measurements setups covering the frequency range from 0.04-140 GHz were used and a careful calibration approach was applied
Keywords :
IMPATT oscillators; S-parameters; calibration; millimetre wave oscillators; 0.04 to 140 GHz; IMPATT diodes; S-parameter characterization; millimeter wave IMPATT oscillators; monolithically integrated technology; Calibration; Diodes; Frequency measurement; Integrated circuit measurements; Integrated circuit technology; MIMICs; Millimeter wave measurements; Millimeter wave technology; Oscillators; Scattering parameters;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587948
