Title :
Accurate modelling of electro-optic effects in coupled quantum well structures
Author :
Chen, X. ; Earnshaw, M.P. ; Bhatnagar, A. ; Batty, W. ; Allsopp, D.W.E.
Author_Institution :
Dept. of Electron., York Univ., UK
Abstract :
This paper reports a study of electroabsorption in GaAs-AlGaAs coupled quantum wells comparing spectra obtained from a variational model with those obtained using the excitonic Green´s function (EGF) approach of Chuang et al [see, Phys. Rev. B, vol. 43, p. 1500, 1991] validating the results, where possible, by further comparison with experiment. The single band electron and hole wave functions and energy levels used to calculate the excitonic wave functions in either the variational or EGF model are found numerically for any arbitrary CQW structure
Keywords :
Green´s function methods; aluminium compounds; electro-optical modulation; electroabsorption; energy states; excitons; gallium arsenide; optical couplers; semiconductor device models; semiconductor quantum wells; variational techniques; GaAs-AlGaAs; GaAs-AlGaAs coupled quantum wells; accurate modelling; arbitrary CQW structure; coupled quantum well structures; electro-optic effects; electroabsorption; energy levels; excitonic Green´s function; excitonic wave functions; hole wave functions; single band electron wave functions; variational model; Absorption; Artificial intelligence; Charge carrier processes; Current measurement; Energy measurement; Excitons; Gallium arsenide; Oscillators; Photoconductivity; Predictive models;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630692
