Title :
Towards vertical III-V nanowire devices
Author :
Borgström, Magnus T. ; Immink, George ; Ketelaars, Bas ; Verheijen, Marcel A. ; Algra, Rienk ; Bakkers, Erik P.A.M.
Author_Institution :
Lund Univ., Lund
Abstract :
Investigation and understanding of growth parameters determining nanowire growth rates is necessary. For vertical architecture design relying on closely-spaced nanowire-based devices, absolute control of growth rates and wire (device) dimensions is required. Heterostructured nanowires where the segment dimensions critically determine quantization effects and thus the (opto) electronic properties of the wires were synthesized.
Keywords :
III-V semiconductors; catalysis; nanowires; semiconductor devices; semiconductor growth; catalyst fraction enhanced nanowire growth; growth parameters; heterostructured nanowires; nanowire growth rates; optoelectronic properties; quantization effects; semiconducting nanowire devices; vapor-liquid-solid growth mode; vertical III-V nanowire devices; wire dimensions; Crystalline materials; III-V semiconductor materials; Laboratories; Nanoscale devices; Nanostructured materials; Optical materials; Physics; Semiconductivity; Solid state circuits; Temperature;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472513
