Title :
High quality layered Pr/sub 2/Ti/sub 2/O/sub 7//SiO/sub 2/ MIM capacitor for mixed signal applications
Author :
Wenger, Ch. ; Sorge, R. ; Schroeder, T. ; Mane, A.U. ; Knoll, D. ; Dabrowski, J. ; Müssig, H. -J
Author_Institution :
IHP, Frankfurt
Abstract :
The performance of layered Pr2Ti2O7 /SiO2 MIM capacitors for mixed-signal and RF device applications is presented for the first time. A capacitance density of 3.2 fF/mum2 with a very low leakage parameter of 5 fA/pFV and quadratic voltage capacitance coefficient of -100 ppm/V2 was achieved. The extrapolated operating voltage for 10 years lifetime is 3 V
Keywords :
MIM devices; capacitors; mixed analogue-digital integrated circuits; praseodymium compounds; silicon compounds; titanium compounds; 10 years; 3 V; MIM capacitors; Pr2Ti2O7-SiO2; capacitance density; low leakage parameter; mixed signal integrated circuits; quadratic voltage capacitance coefficient; Capacitance; Dielectric substrates; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MIM capacitors; Metal-insulator structures; Plasma temperature; Radio frequency; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587957
