Title :
Experimental and modelled configuration of double-barrier HBV based on Al0.7Ga0.3As/GaAs
Author :
Nicolae, B. ; Chowdhury, D. Roy ; Hartnagel, H.L.
Author_Institution :
Tech. Univ. Darmstadt, Darmstadt
Abstract :
Results are presented on device models for an optimisation of processes. In particular the double-barrier Al0.7Ga0.3As/GaAs heterostructure barrier varactor (HBV) designed using the commercial software Synopsys ISE- TCADreg, with accuracy higher than generally published. The design takes into account all the technological steps that are involved during the development of the HBV. The comparison with the measurements shows that the accuracy is higher than standard available models.
Keywords :
aluminium compounds; gallium arsenide; optimisation; semiconductor device models; technology CAD (electronics); varactors; Al0.7Ga0.3As-GaAs; Synopsys ISE- TCAD; double-barrier HBV; heterostructure barrier varactor; optimisation; Coaxial components; Fabrication; Frequency conversion; Gallium arsenide; Helium; Measurement standards; Molecular beam epitaxial growth; Ohmic contacts; Substrates; Varactors; Heterostructure barrier varactor; frequency multiplier; modeling;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472516
