Title :
High-Q saddle-add-on metallization (SAM) inductors on HRS substrates
Author :
Sagkol, H. ; Rejaei, B. ; Burghartz, J.N.
Author_Institution :
Dept. of Electr. Eng., Math. & Comput. Sci., Delft Univ. of Technol.
Abstract :
An optimized saddle-add-on metallization process is used on surface passivated high resistivity silicon substrate to implement very high quality (Q) factor inductors. Test inductors with 5 and 10 nH inductance values are realized and measured to have maximum Q values of 37 at 1.5 GHz and 32 at 900 MHz respectively
Keywords :
elemental semiconductors; inductors; metallisation; passivation; silicon; 1.5 GHz; 900 MHz; Si; high Q inductors; high resistivity silicon substrate; quality factor; saddle-add-on metallization inductors; CMOS logic circuits; CMOS process; Coils; Conductivity; Copper; Dielectric substrates; Inductors; Metallization; Silicon; Testing;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587958
