Title :
Studies on GaAs/AlGaAs based (p and n-type) quantum well infrared photodetector structures grown using MOVPE
Author :
Dixit, V.K. ; Singh, S.D. ; Sharma, T.K. ; Ganguli, Tapas ; Jangir, Ravindra ; Pal, Suparna ; Khattak, B.Q. ; Srivastava, A.K. ; Srivastava, Himanshu ; Oak, S.M.
Author_Institution :
Raja Ramanna Centre for Adv. Technol., Indore
Abstract :
GaAs/AlGaAs based (p and n-type) 50 periods quantum well infrared detector structures were grown using metal organic vapour phase epitaxy (MOVPE). The crystalline quality, optical properties, carrier doping profile and intersubband absorption were studied in detail. These studies were carried out with overall motivation to understand whether p-QWIPs can have comparable or better performance than n-QWIPs considering normal incidence and device processing advantages.
Keywords :
III-V semiconductors; MOCVD; aluminium alloys; carrier mobility; conduction bands; doping profiles; gallium arsenide; infrared detectors; optical properties; photodetectors; quantum well devices; vapour phase epitaxial growth; MOVPE; carrier doping profile; crystalline quality; device processing advantages; intersubband absorption; metal organic vapour phase epitaxy; normal incidence; optical property; p-QWIP; quantum well infrared photodetector structures; Doping profiles; Electromagnetic wave absorption; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gold; Infrared detectors; Ohmic contacts; Photodetectors; Transmission electron microscopy; ECV; Infrared; Inter-subband; QWIP;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472517
