DocumentCode :
3172583
Title :
Simplified theory of optical nonlinearities in spin-polarized bulk GaAs
Author :
Joshua, Arjun ; Venkataraman, V.
Author_Institution :
Indian Inst. of Sci., Bangalore
fYear :
2007
fDate :
16-20 Dec. 2007
Firstpage :
359
Lastpage :
362
Abstract :
Apart from their intrinsic physical interest, spin-polarized many-body effects are expected to be important to the working of spintronic devices. A vast literature exists on the effects of a spin-unpolarized electron-hole plasma on the optical properties of a semiconductor. Here, we include the spin degree of freedom to model optical absorption of circularly polarized light by spin-polarized bulk GaAs. Our model is easy to implement and does not require elaborate numerics, since it is based on the closed-form analytical pair-equation formula that is valid in 3d. The efficacy of our approach is demonstrated by a comparison with recent experimental data.
Keywords :
III-V semiconductors; gallium arsenide; light absorption; magnetoelectronics; GaAs; circularly polarized light; closed-form analytical pair-equation formula; optical absorption; optical nonlinearities; semiconductor; spin-polarized many-body effects; spin-unpolarized electron-hole plasma; spintronic devices; Absorption; Electron optics; Gallium arsenide; Magnetoelectronics; Optical devices; Optical polarization; Optical pumping; Photonic band gap; Plasma density; Vertical cavity surface emitting lasers; Many-body effects; Optical properties of III-V semiconductors; Pump-probe spectroscopy; Spintronics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
Type :
conf
DOI :
10.1109/IWPSD.2007.4472518
Filename :
4472518
Link To Document :
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