DocumentCode
3172629
Title
I-V-T, C-V and photoelectric characteristics of Ni-GaN Schottky and n+ InN-GaN Heterostructure Interface
Author
Mahmood, Z.H. ; Shah, A.P. ; Kadir, Abdul ; Gokhale, M.R. ; Ghosh, Sandip ; Bhattacharya, Arnab ; Arora, B.M.
Author_Institution
Univ. of Dhaka, Dhaka
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
365
Lastpage
367
Abstract
We discuss I-V-T, C-V and photoelectric characteristics of Ni-GaN Schottky and n+ InN-GaN heterostructure interfaces. The Schottky barrier heights obtained from the temperature dependence of I-V characteristics, from C-V measurements, and the photoresponse are compared. From internal photoemission measurements, band offsets at the InN-GaN heterointerface are experimentally determined.
Keywords
Schottky barriers; photoemission; C-V; I-V-T; InN-GaN; Ni-GaN; Schottky barrier heights; band offsets; heterostructure interface; internal photoemission measurements; photoelectric characteristics; Capacitance-voltage characteristics; Gallium nitride; Inorganic materials; Lithography; Ohmic contacts; Photoelectricity; Physics; Schottky barriers; Schottky diodes; Temperature distribution; Band offset; Internal Photoemission; Ni-GaN Schottky; n+ InN-GaN heterojunction;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472520
Filename
4472520
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