Title :
N-polar GaN Electronics
Author :
Rajan, Siddharth ; Hsieh, Eric ; Wong, Man Hoi ; Keller, Stacia ; DenBaars, Steve P. ; Speck, James S. ; Mishra, Umesh K.
Author_Institution :
Univ. of California, Santa Barbara
Abstract :
In this paper, we discuss recent developments in our work on N-polar GaN heterostructure transistors. While most work in GaN devices has been on Ga-polar films, the opposite direction of polarization provides advantages that could be useful for different device applications. We will first discuss implications of the reversed polarization on transistor design.
Keywords :
thin film transistors; GaN; N-polar electronics; N-polar heterostructure transistors; polar films; reversed polarization; Aluminum gallium nitride; Electron mobility; Gallium nitride; Gate leakage; HEMTs; MODFETs; Molecular beam epitaxial growth; Physics; Polarization; Transistors;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472521
