• DocumentCode
    3172649
  • Title

    N-polar GaN Electronics

  • Author

    Rajan, Siddharth ; Hsieh, Eric ; Wong, Man Hoi ; Keller, Stacia ; DenBaars, Steve P. ; Speck, James S. ; Mishra, Umesh K.

  • Author_Institution
    Univ. of California, Santa Barbara
  • fYear
    2007
  • fDate
    16-20 Dec. 2007
  • Firstpage
    368
  • Lastpage
    368
  • Abstract
    In this paper, we discuss recent developments in our work on N-polar GaN heterostructure transistors. While most work in GaN devices has been on Ga-polar films, the opposite direction of polarization provides advantages that could be useful for different device applications. We will first discuss implications of the reversed polarization on transistor design.
  • Keywords
    thin film transistors; GaN; N-polar electronics; N-polar heterostructure transistors; polar films; reversed polarization; Aluminum gallium nitride; Electron mobility; Gallium nitride; Gate leakage; HEMTs; MODFETs; Molecular beam epitaxial growth; Physics; Polarization; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-1728-5
  • Electronic_ISBN
    978-1-4244-1728-5
  • Type

    conf

  • DOI
    10.1109/IWPSD.2007.4472521
  • Filename
    4472521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3172649