Effect of high carrier injection on the performance of a mid-infrared DH-LED

In this paper we present a simple analytical approach to determine the effect of high-level injection on the performance of a double heterostructure light emitting diode (DH-LED) suitable for use as a source in absorption gas spectroscopy and/ or in a futuristic optical fiber communication system in the mid-infrared spectral region at room temperature. The effect of high injection on the lifetime of the carriers (both radiative and non-radiative) and carrier confinement in heterostructure has been simulated analytically. It has been seen that an overall reduction in the carrier lifetime and carrier confinement under high injection actually reduces the quantum efficiency and limit the power output.