Title :
An integrated 60 GHz receiver front-end in SiGe:C BiCMOS
Author :
Sun, Yaoming ; Herzel, Frank ; Wang, Li ; Borngräber, Johannes ; Winkler, Wolfgang ; Kraemer, Rolf
Author_Institution :
IHP Microelectron., Frankfrut, CA
Abstract :
This paper presents a fully differential 60 GHz receiver front-end in SiGe:C technology. It comprises a differential LNA and a Gilbert mixer. The measured down-conversion gain is 28 dB. In the 57-64 GHz band the in-band gain ripple is less than 1 dB, and the output 1-dB compression point is -1.6 dBm. Measured and simulated results agree well over the whole range. The LNA draws 30 mA from a 2.2 V supply and the mixer core consumes 6 mA from 3 V supply. The receiver front-end will be part of an integrated WLAN transceiver in the 60 GHz band
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; carbon; differential amplifiers; low noise amplifiers; millimetre wave amplifiers; millimetre wave mixers; millimetre wave receivers; radio receivers; wireless LAN; 2.2 V; 28 dB; 3 V; 30 mA; 57 to 64 GHz; 6 mA; BiCMOS technology; Gilbert mixer; SiGe:C; differential low noise amplifier; integrated WLAN transceiver; integrated receiver front-end; microwave monolithic integrated circuits; BiCMOS integrated circuits; CMOS technology; Gain; Noise figure; Phase locked loops; Radio frequency; Receivers; Sun; Transceivers; Wireless LAN;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587966
