DocumentCode
3172775
Title
SEM investigations of the surface and cross-section features of ZnO NWs under FIB treatment
Author
Shmavonyan, G. Sh
Author_Institution
Eng. Univ. of Armenia, Yerevan
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
385
Lastpage
388
Abstract
We investigated vapour phase epitaxy (VPE)-grown ZnO nano-wires (NWs) on a Si substrate by scanning electron microscopy (SEM). SEM investigations show that there are single NWs and ensembles of NWs, among which we found straight and bend, perfect and non-perfect NWs, as well as NWs with clean surfaces and surfaces with the dark spots and features. After focused ion beam (FIB) polishing we found that every NW has a clean homogeneous surface, which allow us to conclude that all those dark spots and surface features of the NWs really are just surface features. The FIB milling gives information of the deeper interior of the NWs.
Keywords
II-VI semiconductors; focused ion beam technology; ion beam effects; nanotechnology; nanowires; scanning electron microscopy; semiconductor epitaxial layers; semiconductor quantum wires; surface treatment; wide band gap semiconductors; zinc compounds; FIB milling; FIB treatment; SEM; Si; ZnO; focused ion beam polishing; nanowires; scanning electron microscopy; vapour phase epitaxy; Ion beams; Milling; Optical materials; Optical surface waves; Scanning electron microscopy; Substrates; Surface cleaning; Surface morphology; Surface treatment; Zinc oxide; FIB; SEM; cross-section; surface;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472527
Filename
4472527
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