Title :
Millimeter-wave amplifiers using a 0.8 /spl mu/m Si/SiGe HBT technology
Author :
Chartier, Sébastien ; Sönmez, Ertugrul ; Schumacher, Hermann
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ.
Abstract :
The authors present three amplifiers, operating at 36, 40 and 50GHz implemented in a low-cost 0.8mum Si/SiGe HBT technology which features an fT and fMAXof 80GHz. Each amplifier shows a high gain, a high isolation and a good linearity. The high performance is obtained by using appropriate design techniques such as cascode topology, DC filtering network and efficient isolation techniques
Keywords :
Ge-Si alloys; bipolar integrated circuits; elemental semiconductors; heterojunction bipolar transistors; millimetre wave amplifiers; silicon; 0.8 micron; 36 to 50 GHz; 80 GHz; DC filtering network; Si-SiGe; cascode topology; heterojunction bipolar transistors; millimeter wave amplifiers; Circuit topology; Filtering; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Low pass filters; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587968
