• DocumentCode
    3172805
  • Title

    Millimeter-wave amplifiers using a 0.8 /spl mu/m Si/SiGe HBT technology

  • Author

    Chartier, Sébastien ; Sönmez, Ertugrul ; Schumacher, Hermann

  • Author_Institution
    Dept. of Electron Devices & Circuits, Ulm Univ.
  • fYear
    2006
  • fDate
    18-20 Jan. 2006
  • Abstract
    The authors present three amplifiers, operating at 36, 40 and 50GHz implemented in a low-cost 0.8mum Si/SiGe HBT technology which features an fT and fMAXof 80GHz. Each amplifier shows a high gain, a high isolation and a good linearity. The high performance is obtained by using appropriate design techniques such as cascode topology, DC filtering network and efficient isolation techniques
  • Keywords
    Ge-Si alloys; bipolar integrated circuits; elemental semiconductors; heterojunction bipolar transistors; millimetre wave amplifiers; silicon; 0.8 micron; 36 to 50 GHz; 80 GHz; DC filtering network; Si-SiGe; cascode topology; heterojunction bipolar transistors; millimeter wave amplifiers; Circuit topology; Filtering; Germanium silicon alloys; Heterojunction bipolar transistors; Isolation technology; Low pass filters; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-9472-0
  • Type

    conf

  • DOI
    10.1109/SMIC.2005.1587968
  • Filename
    1587968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3172805