An opto-sensitive InP based IMPATT diode for application in terahertz regime

Author

Mukherjee, Moumita ; Mazumder, Nilratan ; Goswami, Kushalendu ; Roy, Sitesh Kumar

Author_Institution

Visva Bharati Univ., Kolkata

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

392

Lastpage

395

Abstract

The dynamic properties of an InP p pnn IMPATT diode at 0.5 terahertz are studied through a simulation experiment. The study indicates that the InP IMPATT may deliver 27.0 mW of RF power at 0.5 terahertz with an efficiency of 6.3%. However, the realistic consideration of series resistance has imitational effect on exploitable power level from the THz device. The effects of photo-illumination on the device are also investigated through a modified simulation technique. The study reveals that the optically induced leakage current degrades the high frequency properties but with an advantage of wider tuning range of 86 GHz. These studies reveal the potential of InP IMPATT in high-speed THz-optical switching tools.

Keywords

IMPATT diodes; photoluminescence; InP; dynamic properties; optosensitive InP based IMPATT diode; photoillumination; terahertz regime; High speed optical techniques; Indium phosphide; Leakage current; Microwave communication; Optical control; Optical devices; Power generation; Radio frequency; Semiconductor devices; Semiconductor diodes; Flip Chip & Top Mounted device; IMPATT diode; Indium Phosphide; Optical radiation effects; THz;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472530

Filename

4472530