Title :
Reactive ion etching of GaN using SF6+N2/Ar
Author :
Sreenidhi, T. ; DasGupta, Nandita ; Baskar, K.
Author_Institution :
Indian Inst. of Technol. Madras, Chennai
Abstract :
Reactive Ion Etching (RIE) of GaN using SF6 + N2/Ar plasma is studied. The dependence of etch rate on gas ratio and plasma power is reported. A significant improvement in etch-rate is shown using higher gas ratio of Ar. Ar is suggested as a better alternative to N2 to achieve good etch rates. Schottky characteristics on etched surface show evidence of damage. However, thermal annealing after etching has improved the Schottky characteristics.
Keywords :
III-V semiconductors; etching; gallium compounds; plasma materials processing; wide band gap semiconductors; GaN; Schottky characteristics; etch rate; gas ratio; plasma power; reactive ion etching; thermal annealing; Annealing; Argon; Dry etching; Gallium nitride; Plasma applications; Plasma measurements; Plasma properties; Plasma temperature; Sputter etching; Sulfur hexafluoride; Dry Etch Damage; Etch Rate; RIE; Thermal Annealing;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472532
