Title :
A low voltage SiGe BJT integrated RF amplifier with very high third order intercept point
Author :
Kormanyos, B.K. ; Friddell, T.H. ; Quach, T.K. ; Creech, G.L. ; Orlando, P.L. ; Patel, V.J. ; Watson, P.M. ; Axtell, H.S. ; Neidhard, R.A. ; Jessen, G.H. ; Drangmeister, R.G.
Author_Institution :
Solid State Electron., Boeing Co., Seattle, WA
Abstract :
We present a 0.7 to 1.3 GHz RF amplifier with very high third order intercept point (IP3) for use in an integrated receiver. The amplifier is designed in a modern high volume commercial SiGe HBT process and operates with a collector voltage of 1.8 V. An integrated shunt diode linearizer, inductive emitter degeneration, and output impedance matching are all optimized together to achieve an IP3 of +40 dBm with an IP3/Pdc figure of merit ratio of 18.5. This combination of techniques has resulted in unprecedented linearity for a design in a silicon process with a low breakdown voltage
Keywords :
bipolar integrated circuits; heterojunction bipolar transistors; impedance matching; low-power electronics; microwave amplifiers; radio receivers; 0.7 to 1.3 GHz; 1.8 V; SiGe; bipolar junction transistors; heterojunction bipolar transistor; impedance matching; inductive emitter degeneration; integrated RF amplifiers; integrated receiver; integrated shunt diode linearizer; third order intercept point; Bandwidth; Circuits; Diodes; Germanium silicon alloys; Impedance matching; Laboratories; Linearity; Low voltage; Radiofrequency amplifiers; Silicon germanium;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587972
