Title :
Effect of dielectric screening and intersubband coupling on low temperature electron mobility in a AlGaAs / InGaAs / GaAs asymmetric quantum well structure
Author :
Sahu, T. ; Subudhi, P.K. ; Patra, J.N. ; Sarkar, C.K.
Author_Institution :
Berhampur Univ., Berhampur
Abstract :
We study the effects of intersubband coupling and screening on the low temperature electron mobility mun in an Al0.2Ga0.8As / In0.2Ga0.8As / GaAs barrier-delta doped asymmetric quantum well structure by considering the ionized impurity scattering and alloy disorder scattering. We note that the effect of screening on the alloy disorder potential, which has been normally neglected due to its short range nature, yields interesting results on mun.
Keywords :
electron mobility; impurities; quantum wells; semiconductor doping; AlGaAs; GaAs; InGaAs; alloy disorder potential; alloy disorder scattering; barrier-delta doped asymmetric quantum well structure; dielectric screening; intersubband coupling; ionized impurity scattering; low temperature electron mobility; Dielectrics; Doping; Effective mass; Electron mobility; Energy states; Gallium arsenide; Impurities; Indium gallium arsenide; Particle scattering; Temperature; 2DEG; AlGaAs/InGaAs/GaAs systems; Electron mobility; asymmetric quantum wells; delta doping;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472534
