• DocumentCode
    3172906
  • Title

    Effect of deposition time on optical properties of nanocrystalline CdS thin films synthesized via rf- sputtering technique

  • Author

    Ghosh, P.K. ; Ahmed, Sk F. ; Saha, B. ; Chattopadhyay, K.K.

  • Author_Institution
    Abhedananda Mahavidyalaya, Sainthia
  • fYear
    2007
  • fDate
    16-20 Dec. 2007
  • Firstpage
    410
  • Lastpage
    412
  • Abstract
    Nanocrystallites of cadmium sulfide (CdS) thin films have been deposited by radio frequency magnetron sputtering technique. XRD and TEM diffraction patterns have confirmed the nanocrystalline cubic CdS phase formation. The intensity of XRD peaks also increases with the increase of deposition time that implies that better crystallinity takes place at higher deposition time. TEM micrographs of the films have revealed the manifestation of nano CdS phase with average particle size lying in the range 2.00 nm to 5.36 nm. UV-VIS spectrophotometric measurement showed high transparency of the film with a blue-shift of the absorption edge. The direct optical bandgap values of the films increased with the increase of deposition time and lie in the range from 3.06 - 3.94 eV.
  • Keywords
    X-ray diffraction; cadmium compounds; energy gap; nanostructured materials; optical properties; sputtering; transmission electron microscopy; CdS; TEM; UV VIS spectrophotometric measurement; XRD; deposition time; diffraction patterns; electron volt energy 3.06 eV to 3.94 eV; nanocrystalline CdS thin films; optical bandgap; optical properties; phase formation; radio frequency magnetron sputtering; size 2.00 nm to 5.46 nm; Cadmium compounds; Crystallization; Nanoparticles; Optical films; Optical scattering; Physics; Sputtering; Substrates; Transistors; X-ray scattering; Nanocrystalline Cadmiumsulfide thin films; Nanostructural; Opticalstudies;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-1728-5
  • Electronic_ISBN
    978-1-4244-1728-5
  • Type

    conf

  • DOI
    10.1109/IWPSD.2007.4472535
  • Filename
    4472535