Title :
A frequency synthesizer for UWB transceiver in 0.13μm CMOS technology
Author :
Lee, Jung-Eun ; Park, Eun-Chul ; Cha, Choong-Yul ; Chae, Hyun-Su ; Suh, Chun-Deok ; Koh, Jeongwook ; Lee, Hanseung ; Kim, Hoon-Tae
Author_Institution :
Samsung Adv. Inst. of Technol., Yong-In, South Korea
Abstract :
A 3 to 5GHz fast hopping frequency synthesizer for multi-band OFDM UWB applications is designed using 0.13μm CMOS technology. The frequency synthesizer operates in the "Mode 1" bands (centered at 3432MHz 3960MHz, and 4488MHz). Single-sideband mixer up converts or down-converts the 528MHz quadrature signals of ring VCO mixing 3960MHz LC VCO signals. The sideband suppression is less than -40dBc for 3432MHs and -32dBc for 4488MHz and band switching time from 4488MHz to 3432MHz is measured about 1.5ns. Phase noise of the LC VCO and the ring VCO is about -115dBc/Hz and 93dBc/Hz at 1MHz offset frequency, respectively. The total power consumption of the proposed frequency synthesizer is about 62mW with a 1.5V supply voltage.
Keywords :
CMOS integrated circuits; MMIC mixers; MMIC oscillators; OFDM modulation; frequency synthesizers; phase noise; transceivers; ultra wideband technology; voltage-controlled oscillators; 1 MHz; 1.5 V; 1.5 ns; 3 to 5 GHz; 528 MHz; 62 mW; CMOS technology; UWB transceiver; frequency synthesizer; multiband OFDM UWB applications; phase noise; single-sideband mixer; voltage controlled oscillator; voltage controlled oscillators; CMOS technology; Energy consumption; Frequency synthesizers; Mixers; OFDM; Phase noise; Time measurement; Transceivers; Voltage; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587974
