Title :
Comparative studies on As-grown and nanotextured GaN:Mg epilayer
Author :
Pal, Suparna ; Ingale, Alka ; Dixit, V.K. ; Sharma, T.K. ; Porwal, S. ; Mukharjee, C. ; Oak, S.M.
Author_Institution :
Raja Ramanna Centre for Adv. Technol., Indore
Abstract :
Nanotextured high-density Mg-doped GaN were obtained using photoelectrochemical etching. The blue luminescence bands (2.7 - 2.9 eV) of the as-grown and nanotextured samples show a U-shaped intensity variation with temperature in the range of 10 - 150 K. The variation in intensity of observed three peaks are analysed in the light of variation of their peak position and widths as a function of temperature. The origins of these features are discussed in this paper.
Keywords :
III-V semiconductors; etching; gallium compounds; magnesium; nanoelectronics; photoelectrochemistry; semiconductor epitaxial layers; wide band gap semiconductors; GaN:Mg; S-shaped behavior; U-shaped intensity variation; blue luminescence bands; electron volt energy 2.7 eV to 2.9 eV; nanocolumn; nanotextured epilayer; photoelectrochemical etching; temperature 10 K to 150 K; Chemical technology; Epitaxial growth; Epitaxial layers; Etching; Gallium nitride; Luminescence; Scanning electron microscopy; Substrates; Temperature dependence; Thermal conductivity; GaN:Mg; Nanocolumn; Photoelectrochemical etching; S-shaped behavior;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472538
