DocumentCode
3172986
Title
40-Gbit/s Ge-Si photodiodes
Author
Jutzi, M. ; Berroth, M. ; Wöhl, G. ; Oehme, M. ; Kasper, E.
Author_Institution
Inst. for Electr. & Opt. Commun. Eng., Stuttgart Univ.
fYear
2006
fDate
18-20 Jan. 2006
Abstract
Ge-pin-photodiodes monolithically integrated on strain-relaxed buffers are presented. For easy on-wafer testing mesa-type photodiodes are designed for vertical light incidence. At the telecommunication wavelengths of 850 nm, 1298 nm and 1550 nm zero-bias external quantum efficiencies of 23%, 16% and 2.8% are measured. An optoelectronic 3 dB-bandwidth, limited by the RC-product, has been measured up to 38.9 GHz
Keywords
Ge-Si alloys; integrated optoelectronics; monolithic integrated circuits; optical interconnections; optical receivers; p-i-n photodiodes; 38.9 GHz; 40 Gbit/s; 850 to 1550 nm; Ge; on-wafer testing; optical interconnections; optical receivers; pin-photodiodes; strain-relaxed buffers; Bandwidth; Electromagnetic wave absorption; Optical buffering; Optical interconnections; Optical receivers; Photodetectors; Photodiodes; Resonance; Semiconductor device measurement; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location
San Diego, CA
Print_ISBN
0-7803-9472-0
Type
conf
DOI
10.1109/SMIC.2005.1587978
Filename
1587978
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