DocumentCode
3173009
Title
ATLAS simulation of LWIR photodetector based on mercury cadmium telluride
Author
Saxena, P.K. ; Chakrabarti, P.
Author_Institution
Banaras Hindu Univ., Varanasi
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
427
Lastpage
430
Abstract
In the present paper the performance of p+-n0-n+ homojunction Hg1-xCdxTe (lambdac = 10.6 mum photodetector has been analyzed theoretically at 77 K. Electrical characterization of the homojunction photodetector has been carried out using ATLAS software of SILVACOreg and the results are compared and contrasted with the results of our theoretical model. The dependence of the p+-n0 junction position within homostructure on bandgap energy profiles and the influence of doping concentration on photodetector parameters have been studied. The dark current-voltage characteristics and dynamic resistance versus voltage are simulated and analyzed theoretically. Results of our study reveal that suitable biasing conditions the photodetector exhibits a dark current, ID ap10-7 A, and a zero bias resistance, R0 = 106Omega.
Keywords
cadmium compounds; doping; infrared detectors; mercury compounds; photodetectors; ATLAS simulation; HgCdTe; LWIR photodetector; bandgap energy profiles; dark current-voltage characteristics; doping concentration; dynamic resistance; mercury cadmium telluride; Cadmium compounds; Current-voltage characteristics; Doping profiles; Mercury (metals); Performance analysis; Photodetectors; Photonic band gap; Semiconductor process modeling; Software performance; Tellurium; ATLAS; HgCdTe; PIN; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472540
Filename
4472540
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