Title :
Impact of growth parameters on the structural properties of InP/GaAs type-II quantum dots grown by metal-organic vapour phase epitaxy
Author :
Singh, S.D. ; Sharma, T.K. ; Mukherjee, C. ; Oak, S.M.
Author_Institution :
Raja Ramanna Centre for Adv. Technol., Indore
Abstract :
Impact of growth parameters like temperature, coverage and V/III ratio on size and density of metal organic vapour phase epitaxy (MOVPE) grown InP/GaAs quantum dots (QDs) have been studied by using atomic force microscopy technique. It is observed that the QD density saturates after 4.4 MLs of InP coverage. QD density increases and size uniformity improves with the reduction of V/III ratio. A maximum QD density of 4x1010 cm-2 has been achieved at a growth temperature of 550degC with a V/III ratio of 110 and 3.3 MLs of InP, which is one of the best reported by MOVPE technique in the literature.
Keywords :
III-V semiconductors; atomic force microscopy; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; GaAs; InP; MOVPE; V/III ratio; atomic force microscopy technique; growth parameters; metal-organic vapour phase epitaxy; structural properties; type-II quantum dots; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Inductors; Quantum dot lasers; Quantum dots; Temperature; Atomic force microscopy; Quantum dots;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472543
