Optical and electrical properties of amorphous CuAlO2 thin film deposited by RF magnetron sputtering

Author

Nandy, S. ; Maiti, U.N. ; Ghosh, C.K. ; Chattopadhyay, K.K.

Author_Institution

Jadavpur Univ., Kolkata

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

443

Lastpage

445

Abstract

Defects chemistry plays an important role in the origin of p-type conductivity in transparent CuAlO₂ thin films. CuAlO₂ thin film was deposited at room temperature by RF magnetron sputtering on glass and silicon substrates. Films were deposited with various O₂ partial pressures in the Ar+O₂ atmosphere. UV-Vis spectrophotometric measurement indicated the films were having transparency above 75% in the visible region and the tauc gap was 1.6 eV. The room temperature electrical conductivity of the film was 0.32 S cm^-1.

Keywords

aluminium compounds; amorphous semiconductors; copper compounds; electrical conductivity; semiconductor growth; semiconductor thin films; sputter deposition; CuAlO₂; RF magnetron sputtering; amorphous thin film; electrical conductivity; glass substrates; p-type conductivity; silicon substrates; spectrophotometric measurement; Amorphous magnetic materials; Amorphous materials; Chemistry; Conductivity; Glass; Optical films; Radio frequency; Semiconductor thin films; Sputtering; Temperature; AmorphousCuAlO2; Electrical Conductivity; Optical properties; Thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472544

Filename

4472544