Title :
Bias effects on RF passive structures in HR Si substrates
Author :
Lederer, D. ; Raskin, J. -P
Author_Institution :
Microwave Lab., Univ. catholique de Louvain, Louvain-la-Neuve
Abstract :
This work addresses the issue of parasitic conduction at the substrate surface in high resistivity (HR) SOI and oxidized bulk wafers. Surface conduction is related to the presence of free carriers at the SiO2/Si interface and is known to cause severe substrate resistivity degradation. Its impacts on RF losses of coplanar waveguides, substrate crosstalk properties and on the quality factor of spiral inductors are presented and discussed
Keywords :
coplanar waveguides; crosstalk; inductors; microwave circuits; passive networks; silicon; silicon-on-insulator; SiO2-Si; coplanar waveguides; high resistivity silicon-on-insulator; oxidized bulk wafers; spiral inductors; substrate crosstalk; surface conduction; Conductivity; Conductors; Coplanar waveguides; Crosstalk; Inductors; Q factor; Radio frequency; Silicon; Spirals; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587987
