Title :
An analytical model for admittance parameters of GaN MESFET for microwave circuit applications
Author :
Kabra, Sneha ; Kaur, H. ; Haldar, S. ; Gupta, M. ; Gupta, R.S.
Author_Institution :
Univ. of Delhi South Campus, New Delhi
Abstract :
An analytical model of GaN MESFET to evaluate admittance parameters is presented. Frequency dependence of the parasitic capacitances obtained by simulations has been utilized to develop the model. Results have been verified using ATLAS 2D device simulator.
Keywords :
MESFET circuits; gallium compounds; microwave circuits; ATLAS 2D device simulator; GaN; MESFET; microwave circuit applications; parameters admittance model; parasitic capacitances; Admittance; Analytical models; Frequency dependence; Gallium nitride; MESFET circuits; Microwave circuits; Parasitic capacitance; Physics; Polynomials; Scattering parameters; GaN MESFET; admittance parameters; frequency dependent capacitance;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472548
