DocumentCode :
3173296
Title :
Synthesis and characterization of Cd1-xZnxS ternary nanocrystals
Author :
Sethi, R. ; Kumar, L. ; Sharma, P.K. ; Mishra, P. ; Pandey, A.C.
Author_Institution :
Nanophosphor Applic. Centre, New York
fYear :
2007
fDate :
16-20 Dec. 2007
Firstpage :
472
Lastpage :
474
Abstract :
II-VI wide band gap semiconductors and their properties are of great interest for various optoelectronic and solid-state lighting applications. We have synthesized a series of high quality mono-dispersed Cd1-xZnxS (0lestimesles1.0) quantum dots by co-precipitation method at 6degC temperature. X-ray diffraction (XRD), Small angle X-ray scattering (SAXS) and UV-Visible spectrophotometer was used to characterize the sample. X-ray diffractometer confirm the formation of Cd1-xZnxS alloy. All the composition have an average grain size of the order of 4 nm and show a shifting in diffraction peaks towards higher 2thetas values by increase in Zn content. The composition dependence of the band gap energy in the ternary system was determined by optical transmission, which shows that the band gap varies linearly with x from 4.1 ev (Eg for ZnS) to 2.6 ev (Eg for CdS).
Keywords :
II-VI semiconductors; X-ray diffraction; X-ray scattering; cadmium compounds; energy gap; grain size; nanoparticles; precipitation; semiconductor quantum dots; spectrophotometry; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; Cd1-xZnxS; II-VI wide band gap semiconductors; UV-Visible spectrophotometer; X-ray diffraction; XRD; band gap energy; co-precipitation method; grain size; mono-dispersed quantum dots synthesis; optical transmission; optoelectronic lighting applications; semiconductor nanoparticles; small angle X-ray scattering; solid-state lighting applications; temperature 6 C; ternary nanocrystal characterization; Grain size; Optical diffraction; Photonic band gap; Quantum dots; Solid state lighting; Temperature; Wide band gap semiconductors; X-ray diffraction; X-ray scattering; Zinc; Nanoparticles; Small Angle X-Ray Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
Type :
conf
DOI :
10.1109/IWPSD.2007.4472553
Filename :
4472553
Link To Document :
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