• DocumentCode
    3173332
  • Title

    A 2 Gbit/s 0.18 /spl mu/m CMOS front-end amplifier for integrated differential photodiodes

  • Author

    Grazing, M. ; Jutzi, Michael ; Nanz, Winfried ; Berroth, Manfred

  • Author_Institution
    Inst. of Electr. & Opt. Commun. Eng., Stuttgart Univ.
  • fYear
    2006
  • fDate
    18-20 Jan. 2006
  • Abstract
    A front-end amplifier for use with an integrated differential spatially modulated CMOS photodiode using unmodified 0.18 mum technology is presented. The circuit comprises a low-noise transimpedance amplifier (TIA) connected with a high-gain limiting amplifier (LIA) and a 50 Q driver. A combination of thick and thin oxide transistors is used to allow for 2.2 V photodiode bias for enhanced opto-electrical sensitivity and bandwidth. The two-stage TIA is designed for minimum integrated input referred noise current by careful dimensioning of the TIA input stage. The TIA-LIA overall transimpedance is 58 MQ (78 dBQ) and it supports data rates up to 2 Gbit/s. The integrated input referred noise current is 1 muA. The driver provides 125 mV single-ended voltage swing. The power consumption from the 3.3 V supply is 34 mW for the TIA-LIA-combination plus 17 mW for the 50 Omega driver. The optical sensitivity of the amplifier integrated with a CMOS photodiode at an incident wavelength of 850 nm for a bit error rate smaller than 10-11 is -7 dBm at 2 Gbit/s and -10 dBm at 1.25 Gbit/s with a 231-1 PRBS input signal
  • Keywords
    CMOS integrated circuits; amplifiers; integrated optoelectronics; optical receivers; photodiodes; 0.18 micron; 1 muA; 1.25 to 2 Gbit/s; 125 mV; 2.2 to 3.3 V; 50 ohm; 51 mW; 58 Mohm; 850 nm; CMOS front-end amplifier; CMOS photodiode; CMOS photoreceiver; bit error rate; integrated differential photodiodes; integrated photoreceiver; limiting amplifier; thick oxide transistors; thin oxide transistors; transimpedance amplifier; Bandwidth; CMOS technology; Differential amplifiers; Driver circuits; Integrated circuit technology; Low-noise amplifiers; Optical amplifiers; Optical noise; Photodiodes; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-9472-0
  • Type

    conf

  • DOI
    10.1109/SMIC.2005.1587996
  • Filename
    1587996