Title :
Low power 8-GHz ultra-wideband active balun
Author :
Hsu, Ta-Tao ; Kuo, Chien-Nan
Author_Institution :
Dept. of Electron. Eng., National Chiao Tung Univ., Hsinchu
Abstract :
A new low-power CMOS active balun is designed for ultra-wideband applications, using a pair of common-source NMOS and common-gate PMOS transistors. This balun gives an impedance transformation ratio of 1:2. Without compensation feedback, the circuit provides a differential signal within 2dB and 3deg of gain and phase imbalance, respectively, up to 8-GHz. Total power consumption is only 1.44 mW at the supply voltage of Vdd=1.2V, much less than 12 mW of the traditional active balun. This saves 88% of power. The circuit can be fully integrated in RFIC for low power and low cost
Keywords :
CMOS integrated circuits; MMIC; MOSFET; baluns; low-power electronics; radiofrequency integrated circuits; ultra wideband technology; 1.2 V; 1.44 mW; 8 GHz; CMOS active baluns; common-gate PMOS transistors; common-source NMOS transistors; phase splitters; radiofrequency integrated circuits; ultra-wideband active baluns; Differential amplifiers; Energy consumption; Feedback; Frequency; Impedance matching; MOS devices; Microwave circuits; RLC circuits; Ultra wideband technology; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587997