DocumentCode :
3173365
Title :
Sensitivity analysis of MWIR HgCdTe photodiodes
Author :
Saxena, R.S. ; Bhan, R.K. ; Sharma, R.K.
Author_Institution :
Solid State Phys. Lab., Delhi
fYear :
2007
fDate :
16-20 Dec. 2007
Firstpage :
487
Lastpage :
490
Abstract :
The non-uniformity is a major issue in large area IR detector arrays of HgCdTe. The source of this non-uniformity is the variations in material and device parameters. Out of all the parameters, some have large impact on the performance and need to be controlled tightly. Here we present the effect of variations in the various device and material parameters on the performance of MWIR photodiodes of HgCdTe. However, the method is applicable to other types as well. We also show the relative impact of these parameters on the device performance by using the sensitivity analysis.
Keywords :
infrared detectors; photodiodes; sensitivity analysis; HgCdTe; MWIR photodiodes; large area IR detector arrays; sensitivity analysis; Dark current; Helium; Infrared detectors; Layout; Photodiodes; Photonic band gap; Sensitivity analysis; Sensor arrays; Temperature sensors; Voltage; HgCdTe; Infrared; MWIR; Photodiodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
Type :
conf
DOI :
10.1109/IWPSD.2007.4472557
Filename :
4472557
Link To Document :
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