Title :
A SiGe monolithically integrated 75 GHz push-push VCO
Author :
Wanner, Robert ; Lachner, Rudolf ; Olbrich, Gerhard R.
Author_Institution :
Lehrstuhl fur Hochfrequenztechnik, Technische Univ. Munchen, Germany
Abstract :
In this paper we present a fully monolithically integrated push-push VCO fabricated in a production-near SiGe:C bipolar technology. The output frequency of the oscillator can be varactor tuned from 71.3 GHz to 75.8 GHz. In this tuning range the measured output power is 3.5 ± 0.4 dBm and the measured single sideband phase noise is less than -105dBc/Hz at 1MHz offset frequency. The SiGe:C bipolar transistors show a maximum transit frequency fT = 200 GHz and a maximum frequency of oscillation fmax = 275 GHz. For the passive circuitry transmission-line components, MIM-capacitors and integrated resistors are used.
Keywords :
Ge-Si alloys; MIM devices; MMIC oscillators; bipolar transistors; capacitors; millimetre wave oscillators; resistors; voltage-controlled oscillators; 200 GHz; 275 GHz; 71.3 to 75.8 GHz; MIM-capacitors; SiGe; bipolar transistors; integrated resistors; monolithically integrated push-push VCO; transmission-line components; voltage controlled oscillator; Frequency measurement; Germanium silicon alloys; Noise measurement; Phase measurement; Power generation; Power measurement; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1588001
