Title :
Physical and electrical properties of of dilute GaAsN and InAsN layers grown by liquid phase epitaxy
Author :
Das, T.D. ; Mondal, A. ; Dhar, S.
Author_Institution :
Univ. of Calcutta, Kolkata
Abstract :
We have grown GaAsN and InAsN layers by liquid phase epitaxy technique and measured their physical and electrical properties. Hall electron mobility of GaAsN layers is found to decrease as the nitrogen concentration in the material is increased. This corresponds to a simultaneous increase in the concentration of a nitrogen related 0.7 eV electron trap, measured by low temperature photocapacitance technique. This result indicates that the (N-N)as defect, which is believed to be the origin of the electron trap, is partly responsible for the decrease in mobility. InAsN layers have been characterized by energy dispersive X-ray and high resolution X-ray diffraction measurements and the presence of nitrogen in the material has been confirmed.
Keywords :
Hall mobility; III-V semiconductors; X-ray chemical analysis; X-ray diffraction; electron mobility; electron traps; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; photocapacitance; semiconductor growth; GaAsN; Hall electron mobility; InAsN; electrical properties; electron trap; electron volt energy 0.7 eV; energy dispersive X-ray measurements; high resolution X-ray diffraction measurements; liquid phase epitaxy technique; low temperature photocapacitance technique; nitrogen concentration; physical properties; Dispersion; Electric variables measurement; Electron mobility; Electron traps; Energy resolution; Epitaxial growth; Nitrogen; Phase measurement; Temperature measurement; X-ray diffraction; Dilute Nitride; Electron trap; Photocapacitance; liquid phase epitaxy;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472562
