Title :
A 500 MHz 16*16 complex multiplier using self-aligned gate heterostructure FET technology
Author :
Akinwande, T. ; Mactaggart, R. ; Betz, K. ; Grider, D. ; Nohava, T. ; Nohava, J. ; Lange, T. ; Tetzlaff, D. ; Arch, D.
Author_Institution :
Honeywell Sensors & Signal Process. Lab., Bloomington, MN, USA
Abstract :
The authors report a three-stage pipelined 4500-gate 16*16 complex multiplier with a multiply rate of 500 million products per second, producing a complex product which requires four multiplications and two additions every 8 ns at a power dissipation of 4.0 W. The multiplier uses a modified Booth´s algorithm to reduce the number of adders in the multiplier net. The basic building block of the adders and registers is a DCFL NOR gate with a special load structure. The heterostructure active layers were grown by molecular beam epitaxy on 3-in semi-insulating LEC (liquid encapsulated Czochralski) GaAs substrates. The output of bits 1 and 5, operating in the self-test mode, is shown. The circuit was found to perform vector rotations correctly at a clock rate of 560 MHz with a power dissipation of 6.2 W and at 520 MHz with a power dissipation of 4 W. The 520-MHz clock at 4 W corresponds to 96 ps/gate and 0.89 mW/gate because the pipelined stages are limited to 20 gate delays. This performance represents a loaded delay with each gate driving an average fan-out of 2.5 and about 1000 mu m of interconnects at close to minimum spacing.<>
Keywords :
III-V semiconductors; VLSI; digital integrated circuits; field effect integrated circuits; gallium arsenide; molecular beam epitaxial growth; multiplying circuits; 16 bits; 3 in; 4 to 6.2 W; 500 million products per second; 500 to 560 MHz; 8 ns; 96 ps; DCFL NOR gate; GaAs substrates; LEC; clock rate; complex multiplier; fan-out; heterostructure FET technology; heterostructure active layers; liquid encapsulated Czochralski; load structure; modified Booth´s algorithm; molecular beam epitaxy; multiply rate; perform vector rotations; pipelined stages; power dissipation; self-aligned gate; self-test mode; semiconductors; semiinsulating substrate; three stage pipelined multiplier; Adders; Built-in self-test; Clocks; Delay; FETs; Gallium arsenide; Molecular beam epitaxial growth; Power dissipation; Registers; Substrates;
Conference_Titel :
Solid-State Circuits Conference, 1989. Digest of Technical Papers. 36th ISSCC., 1989 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1989.48269