Title :
A 25 GHz quadrature voltage controlled ring oscillator in 0.12/spl mu/m SiGe HBT
Author :
Kodkani, R.M. ; Larson, L.E.
Author_Institution :
Center for Wireless Commun., California Univ., San Diego, CA
Abstract :
A 25 GHz ring VCO is fabricated in a 0.12mum SiGe BiCMOS process. The VCO with a 3.3V supply consumes 32mA. The measured phase noise is -105dBc/Hz at 10MHz offset from the center frequency of 24.3 GHz. Design optimization techniques for high performance ring oscillators in a 0.12 mum SiGe HBT technology are discussed
Keywords :
Ge-Si alloys; MMIC oscillators; bipolar integrated circuits; heterojunction bipolar transistors; phase noise; voltage-controlled oscillators; 0.12 micron; 10 GHz; 24.3 GHz; 25 GHz; 3.3 V; 32 mA; SiGe; heterojunction bipolar transistors; phase noise; quadrature ring oscillator; voltage controlled oscillator; BiCMOS integrated circuits; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Noise measurement; Phase measurement; Ring oscillators; Silicon germanium; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1588003
