Title :
GaN-based gunn diode for high frequency signal generation
Author :
Panda, A.K. ; Agrawal, N.C. ; Parida, R.K. ; Dash, G.N.
Author_Institution :
Nat. Inst. of Sci. & Technol., Berhampur
Abstract :
The dynamic characteristics of GaN-based Gunn diode are reported at D-band and the device properties are compared at the same operating conditions and frequency of operations with GaAs-based Gunn diode. The results indicate that GaN-based Gunn diode generates at least 100 times more power than corresponding GaAs-based Gunn diode at same operating conditions.
Keywords :
Gunn diodes; signal generators; D-band; GaAs; GaN; Gunn diode; high frequency signal generation; Electrons; Frequency; Gallium arsenide; Gallium nitride; Gunn devices; Poisson equations; Semiconductor diodes; Semiconductor materials; Signal generators; Thermal conductivity; Domain formation; Gunn diode; High Frequency; Simulation;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472563
