Title :
Compact SiGe HBT low noise amplifiers for 3.1-10.6 GHz ultra-wideband applications
Author :
Dederer, J. ; Trasser, A. ; Schumacher, H.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ.
Abstract :
Two compact SiGe HBT low noise amplifiers for ultra-wideband (UWB) applications are presented. The measured noise figure of the first approach is 2.4dB at 7GHz and below 2.9dB in the UWB bandwidth from 3.1GHz up to 10.6GHz. The circuit delivers 17.3dB peak gain with gain variations of less than 1.6dB within the entire band. The measured input 1-dB compression point at 7GHz is -13.5dBm with 16.6mA total current consumption from a 3.3V supply. The second approach exhibits noise figures between 2.8dB and 3.2dB within the UWB band. Measurements show 23.5dB of gain with 0.6dB variation over the full bandwidth. The measured input 1-dB compression point at 7GHz is -19.5dBm with a 18.2mA bias current at a 3.0V supply. The first and second design occupy a chip size of 0.39mm times 0.38mm and 0.44mm times 0.38 mm, respectively
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; low noise amplifiers; microwave amplifiers; ultra wideband technology; wideband amplifiers; 0.38 to 0.44 mm; 16.6 mA; 17.3 dB; 18.2 mA; 2.4 dB; 2.8 to 3.2 dB; 23.5 dB; 3.0 to 3.3 V; 3.1 to 10.6 GHz; SiGe; heterojunction bipolar transistors; low noise amplifiers; ultra-wideband applications; Bandwidth; Circuit noise; Current measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Semiconductor device measurement; Silicon germanium; Ultra wideband technology;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1588005
