Title :
Electrical characteristics of pentacene thin film junctions
Author :
Reddy, V. Sivaji ; Das, S. ; Ray, S.K. ; Dhar, A.
Author_Institution :
Indian Inst. of Technol., Kharagpur
Abstract :
Eelectrical properties of ITO/pentacene/Al diode have been investigated by current - voltage (I-V), capacitance - frequency (C-f), and capacitance - voltage (C- V) measurements. The current-voltage characteristics at different temperatures are analyzed in the framework of space charge limited current (SCLC) model. From the measured diode capacitances, it is revealed that the frequency-dependent properties are related to the localized traps in the band gap of pentacene. The C-V characteristics at different test frequencies have been presented. From the capacitance-voltage data the ionized acceptor density, the diffusion potential, and the width of the depletion region are calculated to be 4.0 x 1017 respectively.
Keywords :
capacitance measurement; electric current measurement; frequency measurement; semiconductor junctions; semiconductor thin films; space-charge-limited conduction; voltage measurement; capacitance - frequency measurements; capacitance - voltage measurements; current - voltage measurements; diffusion potential; diode capacitances; frequency-dependent properties; ionized acceptor density; pentacene thin film junctions; space charge limited current model; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Diodes; Electric variables; Frequency measurement; Indium tin oxide; Pentacene; Transistors; Voltage; Capacitance measurement; Charge carrier mobility; Current density; Semiconductor junctions;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472580
