• DocumentCode
    3173798
  • Title

    Electroluminescence degradation study of tris-(8-hydroxyquinoline)aluminum-based organic light emitting diode and influence of light

  • Author

    Thangaraju, K. ; Patankar, M.P. ; Narasimhan, K.L. ; Kumar, J.

  • Author_Institution
    Anna Univ., Chennai
  • fYear
    2007
  • fDate
    16-20 Dec. 2007
  • Firstpage
    573
  • Lastpage
    576
  • Abstract
    Organic light emitting diodes (OLEDs) based on tris-(8-hydroxyquinoline)aluminum (Alq3), the most widely used electroluminescent material in organic electroluminescent devices, have been fabricated. The electroluminescence degradation of Alq3-based OLED during the light exposure under the normal ambient has been studied. It is found that, during the light exposure of OLEDs in the normal ambient, luminescent quencher is formed in Alq3 thin film in the OLEDs and this is acting as non-emissive electron-hole recombination center. Hence, during the operation of OLEDs exposed to light in the normal ambient, the recombination of charge carriers takes place in the Alq3 and also in the nearby non-emissive electron-hole recombination center in the Alq3 thin film in the OLED, quenching the electroluminescence from that of as-prepared OLEDs.
  • Keywords
    electroluminescence; organic light emitting diodes; radiation quenching; thin films; electroluminescence degradation; electroluminescence quenching; electroluminescent material; nonemissive electron-hole recombination center; organic light emitting diode; thin film; Electroluminescence; Fluorescence; Laser excitation; Laser mode locking; Laser theory; Organic light emitting diodes; Photoluminescence; Thermal degradation; Time measurement; Transistors; Electroluminescence degradation; Luminescent quencher; Organic Light Emitting Diodes; Tris-(8-hydroxyquinoline)aluminum;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-1728-5
  • Electronic_ISBN
    978-1-4244-1728-5
  • Type

    conf

  • DOI
    10.1109/IWPSD.2007.4472581
  • Filename
    4472581