Title :
Interface dipole responsible for fermi level pinning in metal/3,4,9,10 perylenetetracarboxylic dianhydride interfaces
Author :
Kumar, Pramod ; Agrawal, Ruchi ; Ghosh, Subhasis
Author_Institution :
Jawaharlal Nehru Univ., New Delhi
Abstract :
Current injection behavior in metal/3,4,9,10 perylenetetracarboxylic dianhydride (PTCDA) interfaces have been systematically studied. Observed interface behaviors show that the barrier of charge injection cannot be explained by simple vacuum level alignment scheme. Moreover injection barrier is found almost independent of metal work function. These observations are explained by the changes of barrier height due to interface dipole barrier which compensate for the difference of work function of PTCDA and metals leading to a metal independent injection barrier or Fermi level pinning at metal/PTCDA interfaces.
Keywords :
Fermi level; charge injection; electronic density of states; interface states; organic semiconductors; semiconductor-metal boundaries; 3,4,9,10 perylenetetracarboxylic dianhydride; Fermi level pinning; charge injection barrier; current injection behavior; interface dipole barrier; metal work function; metal-PTCDA interface; Charge carrier processes; Energy states; Gold; Ionization; OFETs; Organic light emitting diodes; Organic semiconductors; Photoelectricity; Spectroscopy; Tin;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472583
