DocumentCode :
3173887
Title :
Single trench isolation for a 650 V SOI technology with low mechanical stress
Author :
Kittler, G. ; Lerner, R. ; Eckoldt, U. ; Schottmann, K. ; Fritzsch, M. ; Schramm, M. ; Erler, K. ; Heinz, S. ; Horstmann, J.T.
Author_Institution :
X-FAB Semicond. Foundries AG, Erfurt, Germany
fYear :
2010
fDate :
11-14 Oct. 2010
Firstpage :
1
Lastpage :
2
Abstract :
The successful optimization and characterization of a deep trench isolation in a thick SOI process for operating voltages up to 650 V is reported. Different technologies were investigated to optimize the mechanical stress during wafer processing and to increase the breakdown voltage of a single trench configuration. Comprehensive electrical characterization was done to investigate achievable operating conditions and related reliability issues for thick oxide trench isolation layers. The most promising trench technology was choosen as a modular extension to an existing 650 V SOI BCD process.
Keywords :
electric breakdown; integrated circuit reliability; isolation technology; optimisation; silicon-on-insulator; SOI BCD process; SOI technology; breakdown voltage; deep trench isolation; low mechanical stress; optimization; reliability; single trench isolation; voltage 650 V; wafer processing; Current measurement; Electric breakdown; Leakage current; Stress; Temperature; Transmission line measurements; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
ISSN :
1078-621x
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
Type :
conf
DOI :
10.1109/SOI.2010.5641368
Filename :
5641368
Link To Document :
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