Performance evaluation of CoolMOS/sup /spl trade// and SiC diode for single-phase power factor correction applications

Author

Lu, Bing ; Dong, Wei ; Zhao, Qun ; Lee, Fred C.

Author_Institution

Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

2

fYear

2003

fDate

9-13 Feb. 2003

Firstpage

651

Abstract

The low conduction loss and switching loss characteristics make CoolMOS/sup /spl trade// and SiC diode attractive for the single-phase CCM PFC converters. In this paper, based on the device level and converter level evaluation, the loss reduction capability of the CoolMOS/sup /spl trade// and SiC diode is quantified. In addition, for the first time, a successfully operating 1 kW 400 kHz single-phase CCM PFC is demonstrated by using CoolMOS/sup /spl trade// and SiC diode.

Keywords

Schottky diodes; losses; power MOSFET; power convertors; power factor correction; power semiconductor switches; silicon compounds; wide band gap semiconductors; 1 kW; 400 kHz; CoolMOS/sup /spl trade//; SiC; SiC diode; conduction loss; converter level; device level; high frequency; loss reduction capability; performance evaluation; single-phase CCM PFC converters; single-phase power factor correction applications; switching loss characteristics; Application software; Circuit topology; MOSFET circuits; Power electronics; Power factor correction; Power system reliability; Schottky diodes; Silicon carbide; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-7768-0

Type

conf

DOI

10.1109/APEC.2003.1179283

Filename

1179283