Title :
ESD robustness of FDSOI gated diode for ESD network design: Thin or thick BOX?
Author :
Benoist, Thomas ; Fenouillet-Beranger, Claire ; Perreau, Pierre ; Buj, Christel ; Galy, Philippe ; Marin-Cudraz, David ; Faynot, Olivier ; Cristoloveanu, Sorin ; Gentil, Pierre
Abstract :
The robustness against Electrostatic Discharge (ESD) events of gated diodes, fabricated in CMOS 45nm FDSOI technology, is compared for 10nm and 145nm Buried Oxide (BOX) thickness. It is shown that the performance of devices for co-design on thin BOX is improved thanks to a better thermal dissipation: A gain of 1.6 on the robustness was found.
Keywords :
CMOS integrated circuits; electrostatic discharge; silicon-on-insulator; CMOS FDSOI technology; ESD network design; ESD robustness; FDSOI gated diode; buried oxide; electrostatic discharge; gated diodes; thick BOX; thin BOX; Electrostatic discharge; Logic gates; Robustness; Temperature measurement; Transmission line measurements; Voltage measurement;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641372
