DocumentCode
3173985
Title
Study of electrical transport of hole-doped TPD
Author
Ray, Debdutta ; Patankar, Meghan P. ; Narasimhan, K.L.
Author_Institution
Tata Inst. of Fundamental Res., Mumbai
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
619
Lastpage
620
Abstract
In this paper we study the electrical properties of hole-doped TPD using C-V and I-V-T measurements. F4- TCNQ is the acceptor molecule used to dope TPD. From C- V measurements the Fermi level of the system is determined to be at 0.15 eV with respect to the HOMO of TPD. The activation energy of the hole mobility is found from temperature dependence of the ohmic dark current.
Keywords
dark conductivity; hole mobility; organic semiconductors; semiconductor thin films; acceptor molecule; capacitance; electrical transport; hole mobility; hole-doped TPD; organic semiconductor; temperature dependence; Capacitance; Capacitance-voltage characteristics; Crystalline materials; Electric variables measurement; Electrodes; Energy states; Frequency; Indium tin oxide; Organic semiconductors; Temperature dependence; Capacitance; conductivity; doping; organic semiconductor;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472594
Filename
4472594
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