Title :
Study of electrical transport of hole-doped TPD
Author :
Ray, Debdutta ; Patankar, Meghan P. ; Narasimhan, K.L.
Author_Institution :
Tata Inst. of Fundamental Res., Mumbai
Abstract :
In this paper we study the electrical properties of hole-doped TPD using C-V and I-V-T measurements. F4- TCNQ is the acceptor molecule used to dope TPD. From C- V measurements the Fermi level of the system is determined to be at 0.15 eV with respect to the HOMO of TPD. The activation energy of the hole mobility is found from temperature dependence of the ohmic dark current.
Keywords :
dark conductivity; hole mobility; organic semiconductors; semiconductor thin films; acceptor molecule; capacitance; electrical transport; hole mobility; hole-doped TPD; organic semiconductor; temperature dependence; Capacitance; Capacitance-voltage characteristics; Crystalline materials; Electric variables measurement; Electrodes; Energy states; Frequency; Indium tin oxide; Organic semiconductors; Temperature dependence; Capacitance; conductivity; doping; organic semiconductor;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472594
