Title :
Effect of pentacene deposition rate on device characteristics of top contact organic thin film transistors
Author :
Rao, I.V.K. ; Mandal, Saumen ; Katiyar, Monica
Author_Institution :
Indian Inst. of Technol. Kanpur, Kanpur
Abstract :
Pentacene based organic thin film transistor (OTFT) is viable low cost alternative to amorphous silicon based thin film transistor. This is due to comparable mobility of pentacene with amorphous silicon. In this paper, we present the transistor characteristics of top contact pentacene based OTFT as a function of pentacene deposition rate. For deposition at 70degC on silicon oxide surface, morphology and field effect mobility are very sensitive to deposition rate - mobility changes by four orders of magnitude as deposition rate changes from 0.5 to 1.5 nm/min.
Keywords :
coating techniques; organic semiconductors; silicon compounds; thin film transistors; OTFT; field effect mobility; organic thin film transistor; pentacene deposition; temperature 70 degC; Annealing; Displays; Inorganic materials; Organic thin film transistors; Pentacene; Silicon; Substrates; Surface morphology; Temperature; Thin film transistors; deposition rate; mobility; organic thin film transisitors; top contact;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472597