DocumentCode
3174139
Title
The effect of spatially distributed electron and hole blocking layers on the characteristics of OLEDs
Author
Ceasor, Sundeep ; Prasad, Ramesh ; Anand, R.S.
Author_Institution
Indian Inst. of Technol., Kanpur
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
634
Lastpage
636
Abstract
The recombination probability and hence the maximum light intensity of OLEDs largely depends upon the controlled injection of charge carriers and their confinement. In single layer OLEDs, recombination of carriers is highly affected due to quenching effects at cathode. In multilayer OLEDs, effective use of blocking and emissive layers provides better recombination of charge carriers leading to improved electroluminescence, and high efficiency. In the present work, a study has been made on the effect of spatial distribution of electron and hole blocking layers in single layer and multiple quantum well structures on current, voltage, luminance, and efficiency of devices.
Keywords
cathodes; electroluminescence; organic light emitting diodes; OLED; cathode; charge carriers; electroluminescence; emissive layers; hole blocking layers; maximum light intensity; multiple quantum well structures; quenching effects; spatially distributed electron; Carrier confinement; Cathodes; Charge carrier processes; Charge carriers; Electroluminescence; Lighting control; Nonhomogeneous media; Organic light emitting diodes; Radiative recombination; Spontaneous emission; Electron Blocking Layer; Hole Blocking Layer; Organic Light Emitting Diodes; electroluminescence;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472602
Filename
4472602
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