• DocumentCode
    3174139
  • Title

    The effect of spatially distributed electron and hole blocking layers on the characteristics of OLEDs

  • Author

    Ceasor, Sundeep ; Prasad, Ramesh ; Anand, R.S.

  • Author_Institution
    Indian Inst. of Technol., Kanpur
  • fYear
    2007
  • fDate
    16-20 Dec. 2007
  • Firstpage
    634
  • Lastpage
    636
  • Abstract
    The recombination probability and hence the maximum light intensity of OLEDs largely depends upon the controlled injection of charge carriers and their confinement. In single layer OLEDs, recombination of carriers is highly affected due to quenching effects at cathode. In multilayer OLEDs, effective use of blocking and emissive layers provides better recombination of charge carriers leading to improved electroluminescence, and high efficiency. In the present work, a study has been made on the effect of spatial distribution of electron and hole blocking layers in single layer and multiple quantum well structures on current, voltage, luminance, and efficiency of devices.
  • Keywords
    cathodes; electroluminescence; organic light emitting diodes; OLED; cathode; charge carriers; electroluminescence; emissive layers; hole blocking layers; maximum light intensity; multiple quantum well structures; quenching effects; spatially distributed electron; Carrier confinement; Cathodes; Charge carrier processes; Charge carriers; Electroluminescence; Lighting control; Nonhomogeneous media; Organic light emitting diodes; Radiative recombination; Spontaneous emission; Electron Blocking Layer; Hole Blocking Layer; Organic Light Emitting Diodes; electroluminescence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
  • Conference_Location
    Mumbai
  • Print_ISBN
    978-1-4244-1728-5
  • Electronic_ISBN
    978-1-4244-1728-5
  • Type

    conf

  • DOI
    10.1109/IWPSD.2007.4472602
  • Filename
    4472602