Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog applications

SOI multiple-gate devices (MuGFETs) have shown to be promising choices to continue scaling. The devices show excellent gate control and thus reduced short-channel effects. Additionally, by using high-k dielectrics a gate leakage current reduction can be achieved. The incorporation of nitrogen into these high-k materials can improve their thermal stability, reduce the dopant penetration and allow further equivalent oxide thickness scaling. In addition, the use of titanium nitride (TiN) as a metal gate in MuGFETs has shown some interesting features related to Vt adjustment: the effective work function can be tuned by varying the thickness of the TiN layer. Finally, MuGFET structures are attractive for analog applications due to the reduced drain output conductance and large Early Voltage. In this paper, the effect of different TiN metal thickness on pand n-SOI MuGFETs under analog operation is investigated. Next to that, the impact of the HfSiO nitridation and different TiN deposition technique is also addressed.