Title :
Mobility improvement in nanowire junctionless transistors by uniaxial strain
Author :
Raskin, J.P. ; Colinge, J.P. ; Ferain, I. ; Kranti, P. ; Lee, C.-W. ; Dehdashti, N. ; Yan, R. ; Razavi, P. ; Yu, R.
Author_Institution :
Inf. & Commun. Technol., Electron. & Appl. Math., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
Improvement of current drive in n- and p-type silicon junctionless MOSFETs using strain is demonstrated. The extracted piezoresistance coefficients are in good agreement with the piezoresistive theory and the published coefficients for bulk silicon even for 10 nm-thick silicon nanowires as narrow as 20 nm.
Keywords :
MOSFET; elemental semiconductors; nanowires; piezoresistance; semiconductor junctions; silicon; bulk silicon; mobility improvement; n-type silicon junctionless MOSFET; nanowire junctionless transistors; p-type silicon junctionless MOSFET; piezoresistance coefficients; piezoresistive theory; silicon nanowires; uniaxial strain; Current measurement; Logic gates; MOSFETs; Piezoresistance; Silicon; Stress;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641390
