• DocumentCode
    3174317
  • Title

    Effects of residual water in spin-on-glass layer on void formation for multilevel interconnections

  • Author

    Hirashita, N. ; Aikawa, I. ; Ajioka, T. ; Kobayakawa, M. ; Yokoyama, F. ; Sakaya, Y.

  • Author_Institution
    Oki Electric Ind. Co. Ltd., Tokyo, Japan
  • fYear
    1990
  • fDate
    27-29 March 1990
  • Firstpage
    216
  • Lastpage
    220
  • Abstract
    Enhanced void formation observed for first-level Al-Si lines under a large area of second-level Al-Si lines is discussed. The void formation depended on both the annealing temperature of the second-level metal and cure conditions of spin-on-glass films used for the planarization. Studies of thermal desorption with Fourier transform infrared spectroscopy revealed that the residual Si-OH components in spin-on-glass films provided a significant amount of water outgassing, and that water desorbed through interdielectric films but not through Al-Si films. Pressure-cooking states were produced under the second level Al-Si metal during the metallization anneal. A gaseous pressure mechanism to explain the enhanced void formation is proposed.<>
  • Keywords
    VLSI; aluminium alloys; crack detection; failure analysis; metallisation; packaging; silicon alloys; Al-Si lines; AlSi; Fourier transform infrared spectroscopy; SOG; annealing temperature; cure conditions; enhanced void formation; gaseous pressure mechanism; interdielectric films; metallization anneal; multilevel interconnections; planarization; pressure cooking states; residual Si-OH components; second level Al-Si metal; second-level metal; spin-on-glass films; spin-on-glass layer; stress induced voiding; thermal desorption; water; water outgassing; Aluminum; Annealing; Dielectric materials; Fourier transforms; Infrared heating; Infrared spectra; Internal stresses; Metallization; Planarization; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
  • Conference_Location
    New Orleans, LA, USA
  • Type

    conf

  • DOI
    10.1109/RELPHY.1990.66089
  • Filename
    66089