Title :
Effects of residual water in spin-on-glass layer on void formation for multilevel interconnections
Author :
Hirashita, N. ; Aikawa, I. ; Ajioka, T. ; Kobayakawa, M. ; Yokoyama, F. ; Sakaya, Y.
Author_Institution :
Oki Electric Ind. Co. Ltd., Tokyo, Japan
Abstract :
Enhanced void formation observed for first-level Al-Si lines under a large area of second-level Al-Si lines is discussed. The void formation depended on both the annealing temperature of the second-level metal and cure conditions of spin-on-glass films used for the planarization. Studies of thermal desorption with Fourier transform infrared spectroscopy revealed that the residual Si-OH components in spin-on-glass films provided a significant amount of water outgassing, and that water desorbed through interdielectric films but not through Al-Si films. Pressure-cooking states were produced under the second level Al-Si metal during the metallization anneal. A gaseous pressure mechanism to explain the enhanced void formation is proposed.<>
Keywords :
VLSI; aluminium alloys; crack detection; failure analysis; metallisation; packaging; silicon alloys; Al-Si lines; AlSi; Fourier transform infrared spectroscopy; SOG; annealing temperature; cure conditions; enhanced void formation; gaseous pressure mechanism; interdielectric films; metallization anneal; multilevel interconnections; planarization; pressure cooking states; residual Si-OH components; second level Al-Si metal; second-level metal; spin-on-glass films; spin-on-glass layer; stress induced voiding; thermal desorption; water; water outgassing; Aluminum; Annealing; Dielectric materials; Fourier transforms; Infrared heating; Infrared spectra; Internal stresses; Metallization; Planarization; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66089
