Analog operation of junctionless transistors at cryogenic temperatures

This work presented the analog behavior of nMOS Junctionless transistors in the temperature range of 100 K to 473 K investigated by experimental results and simulations. It has been shown that g_m,max of JL present a parabolic-like dependence on temperature. On the other hand, the JL g_m/I_DS is nearly insensitive to temperature variations in the on state, which can be interesting for several analog circuit designs. A linear dependence of V_EA and A_V on T is obtained in the JL, in the contrary of IM transistors where a peak is obtained around 300 K. When evaluated in terms of g_m/I_DS, the A_V of JL devices increases as gate voltage is reduced.